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| 2N5771 / MMBT5771 Discrete POWER & Signal Technologies 2N5771 MMBT5771 C E C BE TO-92 SOT-23 Mark: 3R B PNP Switching Transistor This device is designed for very high speed saturate switching at collector currents to 100 mA. Sourced from Process 65. See PN4258 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 15 15 4.5 200 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5771 350 2.8 125 357 Max *MMBT5771 225 1.8 556 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." (c) 1997 Fairchild Semiconductor Corporation 2N5771 / MMBT5771 PNP Switching Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO ICES IEBO Collector-Emitter Breakdown Voltage* Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current I C = 3.0 mA, IB = 0 I C = 100 A, VBE = 0 I C = 100 A, I E = 0 I E = 100 A, IC = 0 VCB = 8.0 V, IE = 0 VCE = 8.0 V, VBE = 0 VCE = 8.0 V, VBE = 0, TA= 125C VEB = 4.5 V, IC = 0 15 15 15 4.5 10 10 5.0 1.0 V V V V nA nA A A ON CHARACTERISTICS* hFE DC Current Gain I C = 1.0 mA, VCE = 0.5 V I C = 10 mA, VCE = 0.3 V I C = 10mA,VCE = 0.3V,TA = -55C I C = 50 mA, VCE = 1.0 V I C = 1.0 mA, IB = 0.1 mA I C = 10 mA, IB = 1.0 mA I C = 50 mA, IB = 5.0 mA I C = 1.0 mA, IB = 0.1 mA I C = 10 mA, IB = 1.0 mA I C = 50 mA, IB = 5.0 mA 35 50 20 40 120 VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage 0.75 0.15 0.18 0.6 0.8 0.95 1.5 V V V V V V SMALL SIGNAL CHARACTERISTICS Ccb Ceb hfe Collector-Base Capacitance Emitter-Base Capacitance Small-Signal Current Gain VCB = 5.0 V, IE = 0, f = 140 kHz VBE = 0.5 V, IC = 0, f = 140 kHz I C = 10 mA, VCE = 10 V, f = 100 MHz 3.0 3.5 8.5 pF pF MHz SWITCHING CHARACTERISTICS ts ton toff Storage Time Turn-On Time Turn-Off Time I C = 10 mA, VCC = 1.5 V, I B1 = IB2 = 1.0 mA I C = 10 mA, VCC = 1.5 V, I B = 1.0 mA I C = 10 mA, VCC = 1.5 V, I B1 = IB2 = 1.0 mA 20 15 20 ns ns ns *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% 2N6427 / MMBT6427 Discrete POWER & Signal Technologies N 2N6427 MMBT6427 C E C B TO-92 E SOT-23 Mark: 1V B NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 40 40 12 1.2 -55 to +150 Units V V V A C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N6427 625 5.0 83.3 200 Max *MMBT6427 350 2.8 357 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2N6427 / MMBT6427 NPN Darlington Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICEO ICBO IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current IC = 10 mA, IB = 0 IC = 100 A, IE = 0 IE = 10 A, IC = 0 VCE = 25 V, IB = 0 VCB = 30 V, IE = 0 VEB = 10 V, IC = 0 40 40 12 1.0 50 50 V V V A nA nA ON CHARACTERISTICS hFE DC Current Gain* I C = 10 mA, VCE = 5.0 V I C = 100 mA, VCE = 5.0 V I C = 500 mA, VCE = 5.0 V I C = 50 mA, IB = 0.5 mA I C = 500 mA, IB = 0.5 mA I C = 500 mA, IB = 0.5 mA I C = 50 mA, VCE = 5.0 mA 10,000 20,000 14,000 100,000 200,000 140,000 1.2 1.5 2.0 1.75 VCE(sat) VBE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage V V V V SMALL SIGNAL CHARACTERISTICS Cobo Cibo Output Capacitance Input Capcitance VCB = 10 V, IE = 0, f = 1.0 MHz VBE = 1.0 V, IC = 0, f = 1.0 MHz 7.0 15 pF pF *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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